High Voltage Solid-State Switches

High voltage and pulsed power applications imply always a certain risk of sparking and flash over by nature, especially if the ambient conditions, operating conditions, or load conditions change unexpectedly. Therefore, the peak current capability of a solid-state switch should be always as high as possible, at the very least higher than the possible short circuit current of the application. Regarding the selection of voltage rating we suggest a safety margin of at least 5 % for MOSFET switches and at least 20 % for all bipolar switches (IGBT, MCT, SCR) to minimize the risk of damage by unexpected voltage fluctuation or unexpected flyback-voltage. The long-term reliabillty, respectively, the Mean Time Between Failures (MTBF) of a high voltage solid-state switch is always a function of its operating temperature. Therefore, we highly recommend operating the switches only at moderate temperatures whenever possible. This is achieved primarily by choosing sufficient on-resistance, current capability, natural capacitance and coupling capacitance. Please refer to the data sheets and the following product surveys for further information.

SCR Thyristor Switches:

  • High peak current capability
  • Very overload tolerant
  • Extremely high di/dt
  • Easy firing by a simple TTL trigger pulse (2-5 V)

General Purpose MOSFET:

  • Very EMC tolerant
  • Absolutely noise free  in on and off state
  • Low control power at high frequency


High di/dt MOSFET:

  • On-time controllable by TTL signal
  • Extremely low impedance
  • Excellent dv/dt immunity against HV transients

High Voltage Pulser Units:

  • HV switches in pulser configuration
  • No external components required
  • All pulsers optimized for system integration
  • Laboratory pulsers are always CE certified

Fast Recovery HV Diode Assemblies:

  • Free-wheeling diodes for HTS solid-state switches 
  • Soft recovery characteristics
  • High peak current capability
  • Very low inductance, Short recovery time
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Switches On-Time DescriptionMaximum VoltageMaximum CurrentSwitch On-timeCategory
SCR/Thyristor Current Depending4 - 150 kV1 - 24 kA> 35 usA
Standard MOSFET Fixed2 - 200 kV15 - 1600 A100 - 300 nsB1
High di/dt MOSFETFixed0.5 - 40 kV70 - 1600 A150 nsB2
Ultrafast MOSFET Fixed3 - 12 kV60 - 200 A120 - 200 nsB3
Low On-Res. MOSFET Fixed3 - 24 kV60 - 1040 A150 - 250 nsB4
Standard MOSFET Variable0.5 - 36 kV12 - 640 A> 50 nsC1
High di/dt MOSFETVariable3 - 36 kV200 - 3200 A> 300 nsC2
Low C MOSFET Variable3 - 140 kV30 - 4000 A> 60 nsC3
Low On-Res. Trench FETVariable0.5 - 160 kV125 - 6000 A> 120 nsC4
AC voltage MOSFETVariable1.2 - 140 kV12 - 400 A> 50 nsC5
General Purpose IGBT Variable3 - 36 kV800 - 9600 A> 0.2 usC6
MCT Thyristor Variable4 - 18 kV3000 A> 1 usC7
Push-Pull MOSFETVariable2 x 1.2 - 140 kV2 x 12 - 300 A> 50 nsC8
AC Push-Pull MOSFETVariable2 x 3 - 140 kV2 x 12 - 130 A> 70 nsC9
HV Pulser Units Variable3 - 12 kV12 - 80 A> 4 nsD
HV Diode AssembliesE
Direct Liquid CoolingF